By Thomas Sixsmith
Bargains assurance of layout, engineering, chemical resistance, expenses, criteria, codes and requirements. The textual content presents a resistance advisor that lists over 800 chemical compounds and approximately four hundred alternate names cross-referenced to formal chemical names, masking all recognized chemical resistance info for the preferred thermoplastic piping structures. The booklet covers purposes, choice, set up and upkeep.
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The thickness of the electroformed nickel layer can be controlled by the current density and the deposition time . In this study, nickel was selected for the electroforming layer material because of its hardness and durability. Nickel sulfamate solution (Ni(NH2SO3)2Á4H2O) was used to fabricate the metallic mold. 1 Metallic Mold for a Microlens Array An E-beam evaporation system was used to deposit the seed layer on the mother lens, which was fabricated via the reﬂow process. Nickel was chosen as the seed layer material because it possesses desirable surface properties such as high hardness and thermal stability.
4 Focused Ion Beam Patterning A focused ion beam (FIB) is patterning process by using cutting off deﬁned material and depositing material onto it. Generally, a gallium ion is used to mill and deposit any material. And addition of the some gas compounds makes selective etching and increases the etching velocity that is used to modify and edit nano/microdevices. Also, FIB is used to make sample for showing the cross-section view of nano/microstructure, site-speciﬁc transmission electron microscopy (TEM) sample preparation, and martial grain/ﬁlm imaging.
34]. Copyright 2004, APEX/JJAP. mold insert for a refractive microlens. The radius of curvature of the cavity was 153 mm. Anisotropic wet etching was used to fabricate mold inserts for a V-groove optical bench and a blazed DOE [42,43]. The anisotropic etching rate of silicon in an aqueous solution of KOH yields smooth, highly accurate oriented surfaces. 5 shows a V-groove silicon mold insert fabricated by anisotropic wet etching (20% KOH at 80 C) a silicon nitride-masked (100) silicon wafer .